Monolithic Construction with Built−in Base−Emitter Shunt Resistors
Low Collector−Emitter Saturation Voltage − VCE(sat) = 2.0 Vdc (Max) @ IC = 3.0 Adc = 2.5 Vdc (Max) @ IC = 8.0 Adc
We have undergone rigorous testing and stable performance
Designed for general-purpose amplifier and low-speed switching applications. Collector Emitter Voltage V(br)ceo:100V Power Dissipation Pd:80W DC Collector Current:8A DC Current Gain hFE:200hFE Maximum Collector Cut-off Current:0.05mA Minimum Operating Temperature:-65 °C Maximum Operating Temperature:+150 °C Dimensions:10.4 x 4.6 x 9.15mm Package include 10pcs*TIP102